Metal Sheet Resistance Measurement

The resistance between opposite sides of a square.

Metal sheet resistance measurement.

Metal layers al mo au etc. If wafer is 400 µm thick and the probe spacing is 1 mm determine the wafer resistivity and doping concentration. Contactless methods of conductivity and sheet resistance measurement for semiconductors conductors and superconductors april 2013 measurement science and technology 24 6 062001. Inline sheet resistance measurement conductivity mapping of thin films on wafer thin film monitoring of.

In simple form two equal sized electrodes in good contact with the surface of the sample is used for measuring surface resistivity. Sheet resistance often called sheet resistivity is a measure of resistance of thin films that are nominally uniform in thickness. In a four point probe measurement on a silicon wafer that is uniformly doped n type the measured resistance is 40 ω. The current tends to stay in the silicide as long as possible before moving into the silicon over a distance corresponding to the transfer length lc.

Distance between electrodes is equal to width of the electrode. What is sheet resistance. Mazierska microwave and rf methods of contact less mapping of the sheet resistance and the complex permittivity of conductive materials and semiconductors measurements science and technology vol 22 085703 6pp 2011. The key advantage of sheet resistance over other resistance measurements is that it is independent of the size of the square enabling an easy comparison.

It is a measure of the lateral resistance through a thin square of material i e. Metal nanowires meshes. Lc is the transfer length defined as lc ρc rs. It is commonly used to characterize materials made by semiconductor doping metal deposition resistive paste printing and glass coating.

Formation rout e notes. Examples of these processes are. Sheet resistance also known as surface resistance or surface resistivity is a common electrical property used to characterise thin films of conducting and semiconducting materials. Silicide is characterized by rs the sheet resistance under the silicide w is the transistor width and l is the length of the silicide contact.

Doped semiconductor regions and the resistors that are screen printed onto the substrates of thick film hybrid microcircuits. Transparent conductive oxides ito zno etc. G 4 1 ln sinh t. And then sheet resistance measurement was performed by four point probe method to identify the changes of p doping.

Non contact sheet resistance measurement.